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 Data Sheet No. PD60298_B
IPS1051LPBF / IPS1052GPbF
SINGLE/DUAL CHANNEL INTELLIGENT POWER LOW SIDE SWITCH
Features
* * * * * * * Over temperature shutdown Over current shutdown Active clamp Low current & logic level input ESD protection Optimized Turn On/Off for EMI Diagnostic on the input current
Product Summary Rds(on) 250m (max.) Vclamp 39V Ishutdown 2.8A (typ.) Packages
Description
The IPS1051LPBF and IPS1052GPbF are Intelligent Power Switches (IPS) featuring low side MOSFETs with over-current, over-temperature, ESD protection and drain to source active clamp. The IPS1052G is a dual channel device while the IPS1051 is a single channel. These devices offer protections and the high reliability required in harsh environments. Each switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165C or when the drain current reaches 3A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
SOT-223 IPS1051LPBF
SO-8 IPS1052GPbF
Typical Connection
+Bat
Load D 5-6-7-8 (IPS1052G) 2 (IPS1051L)
2-4 (IPS1052G) 1 (IPS1051L) IN Control Input R Input Signal V Diag
S
1-3 (IPS1052G) 3 (IPS1051L)
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1
IPS1051LPBF / IPS1052GPbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Ground lead. (Tambient=25C unless otherwise specified).
Symbol
Vds Vds cont. Vin Isd cont. Pd
Parameter
Maximum drain to source voltage Maximum continuous drain to source voltage Maximum input voltage Max diode continuous current (limited by thermal dissipation) Maximum power dissipation (internally limited by thermal protection) Rth=60C/W IPS1051L 1" sqrt. footprint Rth=100C/W IPS1052G std. footprint Electrostatic discharge voltage (Human body) C=100pF, R=1500 Between drain and source Other combinations Electrostatic discharge voltage (Machine Model) C=200pF,R=0 Between drain and source Other combinations Max. storage & operating temperature junction temperature
Min.
-0.3 -0.3
Max.
36 28 6 1.3 2 1.25
Units
V V V A W
ESD

4 3 0.5 0.3 150
kV
Tj max.
-40
C
Thermal Characteristics
Symbol
Rth1 Rth2 Rth1 Rth1
Parameter
Thermal resistance junction to ambient IPS1051L SOT-223 std. footprint Thermal resistance junction to ambient IPS1051L SOT-223 1" sqrt. footprint Thermal resistance junction to ambient IPS1052G SO-8 std. Footprint 1 die active Thermal resistance junction to ambient IPS1052G SO-8 std. footprint 2 die active
Typ.
100 60 100 130
Max.

Units
C/W
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol
VIH VIL
Parameter
Min.
4.5 0

Max.
5.5 0.5 1.4 1.1 0.5
Units
V A A A k H kHz s
High level input voltage Low level input voltage Continuous drain current, Tambient=85C, Tj=125C, Vin=5V Rth=60C/W IPS1051L 1" sqrt. Footprint Continuous drain current, Tambient=85C, Tj=125C, Vin=5V Ids Rth=100C/W IPS1052G 1" sqrt. Footprint - 1 die active Continuous drain current, Tambient=85C, Tj=125C, Vin=5V Rth=130C/W IPS1052G 1" sqrt. Footprint - 2 die active Rin Recommended resistor in series with IN pin to generate a diagnostic Max L Max. recommended load inductance ( including line inductance )(1) Max. F Max. frequency Max. t rise Max. input rise time (1) Higher inductance is possible if maximum load current is limited - see figure 11
0.5

10 30 10 1
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IPS1051LPBF / IPS1052GPbF
Static Electrical Characteristics
Tj=25C, Vcc=14V (unless otherwise specified)
Symbol
Rds(on) Idss1 Idss2 V clamp1 V clamp2 Vin clamp Vth
Parameter
ON state resistance Tj=25C ON state resistance Tj=150C Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source pin clamp voltage Input threshold voltage
Min.

Typ.
160 340 0.1 0.2 38 39 6.5 1.7
Max.
250 450 5 10
Units
m A
Test Conditions
Vin=5V, Ids=1A Vcc=14V, Tj=25C Vcc=28V, Tj=25C Id=20mA Id=0.5A Iin=1mA Id=10mA
36
5.5
42 7.5
V
Switching Electrical Characteristics
Vcc=14V, Resistive load=10, Rinput=50, Vin=5V, Tj=25C
Symbol
Tdon Tr Tdoff Tf Eon + Eoff
Parameter
Turn-on delay time to 20% Rise time 20% to 80% Turn-off delay time to 80% Fall time 80% to 20% Turn on and off energy
Min.
1 1 3 2
Typ.
3 3 15 4 0.1
Max.
10 10 40 10
Units
s mJ
Test Conditions
See figure 2
Protection Characteristics
Symbol
Tsd Isd OV
Parameter
Min.
150(2) 1.9 34
Typ.
165 2.8 37 1.7 50
Max.
Units
C A V V s
Test Conditions
See figure 1 See figure 1
Over temperature threshold Over current threshold Over voltage protection (not active when the device is ON ) Vreset IN protection reset threshold Treset Time to reset protection (2)Guaranteed by design
3.8

15(2)
200
Vin=0V, Tj=25C
Diagnostic
Symbol
Iin, on Iin, off
Parameter
ON state IN positive current OFF state IN positive current (after protection latched - fault condition)
Min.
15 150
Typ.
32 230
Max.
70 350
Units
A
Test Conditions
Vin=5V
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3
IPS1051LPBF / IPS1052GPbF
Lead Assignments
2
8765
1- In 2- D 3- S
1 2 3 1234
1- S1 2- In1 3- S2 4- In2 5-6 D2 7-8 D1
SOT-223
SO8
Functional Block Diagram
All values are typical
DRAIN
37V
IN
75
15k
Vds > O.V.
43V
150k
S R
Q
6V
Tj > 165C I > Isd
2k
SOURCE
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4
IPS1051LPBF / IPS1052GPbF
All curves are typical values. Operating in the shaded area is not recommended.
Vin Ids
Ishutdown Isd
tt>T reset
80%
Vin
20%
Tr-in
80%
Tj
Tsd 165C Tshutdown
Ids
20%
Td on Tr
Td off Tf
Vdiag
normal fault
Vds
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching definitions
T clamp
Vin
L
Rem : During active clamp, Vload is negative
V load R + 14V Vds S Ids
Ids
Vds clamp
D IN
5V
Vds
Vin
Vcc
0V
See Application Notes to evaluate power dissipation
Figure 3 - Active clamp waveforms
Figure 4 - Active clamp test circuit
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IPS1051LPBF / IPS1052GPbF
200%
200%
Rds(on), Drain-to-Source On Resistance (normalized)
150%
Rds(on), Drain-to-Source On Resistance (Normalized)
1 50%
100%
1 00%
50%
0% 0 1 2 3 4 5 6
50% -50
0
50
1 00
1 50
Vin, input voltage (V)
Figure 5 - Normalized Rds(on) (%) Vs Input voltage (V)
Tj, junction temperature (C)
Figure 6 - Normalized Rds(on) (%) Vs Tj (C)
4
140% 120%
3
Isd, normalized I shutdown (%)
6
100% 80% 60% 40% 20% 0%
Ids, output current
2
1
I limit I shutdown
0 0 1 2 3 4 5
-50
0
50
100
150
Vin, input voltage (V)
Figure 7 - Current limitation and current shutdown Vs Input voltage (V)
Tj, junction temperature (C)
Figure 8 - Normalized I shutdown (%) Vs junction temperature (C)
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IPS1051LPBF / IPS1052GPbF
3
60C/W
3 2.5
100C/W
2.5
Ids, cont. Output current (A)
Ids, output current (A)
-50 0 50 100 150
2 1.5 1 0.5 0
2 1.5 1 0.5 0 1 10 100 1000
Tamb, Ambient temperature (C)
Figure 9 - Max. continuous output current (A) Vs Ambient temperature (C)
Protection response time (s)
Figure 10 - Ids (A) Vs over temperature protection response time (s) / IPS1051L
10
100
Zth, transient thermal impedance (C/W)
10
Ids, output current (A)
1
0.1
0.01 1E-6 1E-4 1E-2 1E+0 1E+2
1 0.001
0.01
0.1
1
Inductive load (mH)
Figure 11 - Max. ouput current (A) Vs Inductive load (mH)
Time (s)
Figure 12 - Transient thermal impedance (C/W) Vs time (s)
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IPS1051LPBF / IPS1052GPbF
250
200
200
Tsd, over temperature shutdown (C)
150
180 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6
Ion, Ioff, input durrent (A)
Icc off
150
Icc on
100
50
0 -50 0 50 100
Tj, junction temperature (C)
Figure 13 - Input current (A) On and Off Vs junction temperature (C)
Vin, input voltage (V)
Figure 14 - Over temperature shutdown (C) Vs input voltage (V)
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8
IPS1051LPBF / IPS1052GPbF
Case Outline - SOT-223 - Automotive Q100 PbF MSL2 qualified
Leads and drain are plated with 100% Sn
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9
IPS1051LPBF / IPS1052GPbF
Tape & Reel - SOT-223
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10
IPS1051LPBF / IPS1052GPbF
Case Outline - SO-8 - Automotive Q100 PbF MSL2 qualified
Leads and drain are plated with 100% Sn www.irf.com
11
IPS1051LPBF / IPS1052GPbF
Tape & Reel - SO-8
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. SOT223 and SO8 are MSL2 qualified. This product is designed and qualified for the Automotive [Q100] market. 12/06/2006
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